30V New Fine Trench MOSFET with Ultra Low On-Resis tance
نویسندگان
چکیده
The present paper proposes a new ultra low on-resistance trench MOSFET. The proposed device is characterized by the narrow high resistance n-epi layer between the two trench gates and the thin n-drift layer, which lies between the trench bottom and the n+ substrate. The high resistance n-epi between the trenches is always depleted because of the built-in potential of the p+ gate poly, resulting in the normally-off characteristics without p-base. The thin n-drift layer enables the use of thin gate oxide. The optimum doping concentration and thickness of the n-drift is chosen so that the on-resistance is minimized. The proposed trench MOSFET experimentally achieved a 3 3 0 drain-source blocking voltage and a 1 O d h " specific on-resistance at Vgs=1OV. This is the lowest Ron value ever reported. Source
منابع مشابه
Ultra Low Power Symmetric Pass Gate Adiabatic Logic with CNTFET for Secure IoT Applications
With the advent and development of the Internet of Things, new needs arose and more attention was paid to these needs. These needs include: low power consumption, low area consumption, low supply voltage, higher security and so on. Many solutions have been proposed to improve each one of these needs. In this paper, we try to reduce the power consumption and enhance the security by using SPGAL, ...
متن کاملPower MOSFET Basics
Power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Most power MOSFETs feature a vertical structure with Source and Drain on opposite sides of the wafer in order to support higher current and voltage. Figure 1a and 1b show the basic device structure...
متن کاملDesign of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance
© 2012 ETRI Journal, Volume 34, Number 1, February 2012 Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance an...
متن کاملSimulating the Avalanche Behavior of Trench Power MOSFETs
The avalanche behavior of a new Trench Power MOSFET was investigated by means of measurement and electro-thermal simulation. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects are proposed. They are in good agreement with measured results. Furthermore, t...
متن کاملPATT ERN OF RESIS TANCE TO BETA-LACTAMS IN E.COLI ISOLATED FROM URINARY TRACT INFECTIONS IN IRAN
A total of 385 urine specimens from suspected urinary tract infections were subjected to bacteriological analysis and susceptibility testing at a major university hospital laboratory in Tehran. A battery of eight beta-Iactam antibiotics, commonly prescribed in Iran, and three third-generation cephalosporins (ceftazidime, ceftriaxone and ceftizoxime) that are usually reserved for limited us...
متن کامل